Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
What's needed to fill in the gaps in understanding GaN HEMTs and their catastrophic failures. Degradation mechanisms that plague GaN HEMTs. Why overvoltage ruggedness and surge-energy withstand go ...
Currently available GaN technologies have their shortcomings. These are discussed in the following article followed by the presentation of a novel GaN technology that eliminates these shortcomings.
The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...
As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
Components based on gallium nitride (GaN) offer a range of important benefits versus silicon devices, including smaller size allowing for greater power-density circuits, improved efficiency, reduced ...
Gallium nitride (GaN) based transistors have been around for many years for rf applications. More recently, the focus has been on development of cost effective, high performance GaN based devices for ...
Infineon’s radiation-hardened GaN HEMT is the first in-house manufactured device qualified to the Joint Army Navy Space (JANS) MIL-PRF-19500/794 specification—the highest quality certification issued ...
SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
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