High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.

High Electron Mobility Transistors (HEMTs) underpin many advanced electronic applications due to their superior performance in high-frequency and high-power regimes. The ongoing miniaturisation and ...

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...

Amplitech Group, Inc. (NASDAQ:AMPG) shares are trading higher on Wednesday after the company announced the development and deployment of its proprietary low-noise cryogenic High Electron Mobility ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...

A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...

The TPH2006PS is said to be the first GaN high electron mobility transistor (HEMT) on SiC substrate to receive JEDEC qualification. The 600-V HEMT device comes from Transphorm Inc., Goleta, Calif., ...