Advances in TMD growth Building on our success in scaling ultra-wide bandgap materials, we have made significant progress in expanding scalable growth of two-dimensional (2D) materials, specifically ...

The cost of SiC substrates needs to come down. But are we going to hamper these efforts by imposing limits on the thickness ...

Aside from a couple of makers of optical components, shares of companies in the CS industry have headed south over the last ...

Altum RF will show its latest RF and mmWave products and technical expertise at IMS 2025, to be held in San Francisco, US.15 ...

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Navitas Semiconductor, maker of GaNFast GaN and GeneSiC SiC power semiconductors, has announced a collaboration with NVIDIA ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...

Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...

AlN vs BN The obvious candidate material for providing cathodoluminescence is AlN, a key semiconductor for producing deep UV ...

KLA Corporation, a US company specialising ni semiconductor process control, has announced the opening of its new $138m R&D and manufacturing center in Newport, Wales, UK, continuing the company’s ...

Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals” Appl. Phys. Express. 10 045504 (2017). The strengths of GaN are not just a high breakdown voltage that results from the wide ...

Silanna Semiconductor has launched the FirePower series of laser driver ICs that reduce the size and increase the peak power ...